Semiconductor material and method for enhancing solubility of a dopant therein

A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under vario...

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Bibliographische Detailangaben

Hauptverfasser:	Sadigh, Babak, Lenosky, Thomas J, Diaz de la Rubia, Tomas, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, Quong, Andrew
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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