Method to increase cracking threshold for low-k materials

23 A method of increasing the cracking threshold of a low-k material layer comprising the following steps. A substrate having a low-k material layer formed thereover is provided. The low-k material layer having a cracking threshold. The low-k material layer is plasma treated to increase the low-k ma...

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Hauptverfasser: Li, Lih-Ping, Lu, Yung-Chen, Ko, Chung-Chi
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Lu, Yung-Chen
Ko, Chung-Chi
description 23 A method of increasing the cracking threshold of a low-k material layer comprising the following steps. A substrate having a low-k material layer formed thereover is provided. The low-k material layer having a cracking threshold. The low-k material layer is plasma treated to increase the low-k material layer cracking threshold. The plasma treatment including a gas that is CO, He, NHor combinations thereof.
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title Method to increase cracking threshold for low-k materials
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