Programming of nonvolatile memory cells

The present invention relates generally to electrically erasable, programmable read only memory (EEPROM) cells and specifically, to methods for programming thereto. A method for programming an NROM cell which includes the steps of applying a drain, a source and a gate voltage to the cell and verifyi...

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Bibliographische Detailangaben

Hauptverfasser:	Bloom, Ilan, Eitan, Boaz, Cohen, Zeev, Finzi, David, Maayan, Eduardo
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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