Programming of nonvolatile memory cells

Programming of nonvolatile memory cells

The present invention relates generally to electrically erasable, programmable read only memory (EEPROM) cells and specifically, to methods for programming thereto. A method for programming an NROM cell which includes the steps of applying a drain, a source and a gate voltage to the cell and verifyi...

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Hauptverfasser: Bloom, Ilan, Eitan, Boaz, Cohen, Zeev, Finzi, David, Maayan, Eduardo
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Sprache:eng
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creator Bloom, Ilan
Eitan, Boaz
Cohen, Zeev
Finzi, David
Maayan, Eduardo
description The present invention relates generally to electrically erasable, programmable read only memory (EEPROM) cells and specifically, to methods for programming thereto. A method for programming an NROM cell which includes the steps of applying a drain, a source and a gate voltage to the cell and verifying a programmed or a non-programmed state of the cell. If the cell is in the non-programmed state, the method includes the steps of increasing the drain voltage and maintaining the gate voltage at a constant level during at least a part of the step of increasing. The steps of applying, verifying, increasing and maintaining are repeated until the cell reaches the programmed state.
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A method for programming an NROM cell which includes the steps of applying a drain, a source and a gate voltage to the cell and verifying a programmed or a non-programmed state of the cell. If the cell is in the non-programmed state, the method includes the steps of increasing the drain voltage and maintaining the gate voltage at a constant level during at least a part of the step of increasing. 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title Programming of nonvolatile memory cells
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