Method of making ultra thin body vertical replacement gate MOSFET

1. Field of the Invention A method of fabricating a VRG MOSFET includes the steps of: (a) forming a VRG multilayer stack; (b) forming a trench in the stack; (c) depositing an ultra thin, amorphous semiconductor ( -semic) layer on the sidewalls of the trench (portions of the ultra thin layer on the s...

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Bibliographische Detailangaben

Hauptverfasser:	Hergenrother, John Michael, Kalavade, Pranav
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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