Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device
1. Field of the Invention The present invention provides a method of producing a zinc oxide thin film in which a current is passed between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and zinc ammonia complex ions, and an electrode as an anode i...
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creator | Sano, Masafumi Sonoda, Yuichi |
description | 1. Field of the Invention
The present invention provides a method of producing a zinc oxide thin film in which a current is passed between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and zinc ammonia complex ions, and an electrode as an anode immersed in the aqueous solution to form a zinc oxide thin film on the conductive substrate. This method stabilizes formation of the zinc oxide thin film and improves adhesion between the thin film and the substrate. |
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The present invention provides a method of producing a zinc oxide thin film in which a current is passed between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and zinc ammonia complex ions, and an electrode as an anode immersed in the aqueous solution to form a zinc oxide thin film on the conductive substrate. This method stabilizes formation of the zinc oxide thin film and improves adhesion between the thin film and the substrate.</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6802953$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6802953$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Sano, Masafumi</creatorcontrib><creatorcontrib>Sonoda, Yuichi</creatorcontrib><creatorcontrib>Canon Kabushiki Kaisha</creatorcontrib><title>Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device</title><description>1. Field of the Invention
The present invention provides a method of producing a zinc oxide thin film in which a current is passed between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and zinc ammonia complex ions, and an electrode as an anode immersed in the aqueous solution to form a zinc oxide thin film on the conductive substrate. This method stabilizes formation of the zinc oxide thin film and improves adhesion between the thin film and the substrate.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNyrEKwjAQgOEsDqK-wz2AQrEoOovi4uYuIbk0B0kuJNciDj67Ch07OP388M3V-4bi2QI7yIVtbyh18KJkgJ9kEcRTAkchriFOyOxZeOAgmgxYHMgg6GQnbcVIhtP3hMuIl2rmdKi4GrtQcDnfT9dNX7MWTFIfXdG_NPtDsz3u2vYP8gE_okm6</recordid><startdate>20041012</startdate><enddate>20041012</enddate><creator>Sano, Masafumi</creator><creator>Sonoda, Yuichi</creator><scope>EFH</scope></search><sort><creationdate>20041012</creationdate><title>Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device</title><author>Sano, Masafumi ; Sonoda, Yuichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_068029533</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Sano, Masafumi</creatorcontrib><creatorcontrib>Sonoda, Yuichi</creatorcontrib><creatorcontrib>Canon Kabushiki Kaisha</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sano, Masafumi</au><au>Sonoda, Yuichi</au><aucorp>Canon Kabushiki Kaisha</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device</title><date>2004-10-12</date><risdate>2004</risdate><abstract>1. Field of the Invention
The present invention provides a method of producing a zinc oxide thin film in which a current is passed between a conductive substrate immersed in an aqueous solution containing at least zinc ions, ammonium ions and zinc ammonia complex ions, and an electrode as an anode immersed in the aqueous solution to form a zinc oxide thin film on the conductive substrate. This method stabilizes formation of the zinc oxide thin film and improves adhesion between the thin film and the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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title | Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device |
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