Methods and systems for programmable memory using silicided poly-silicon fuses

1. Field of the Invention The present invention is directed to methods and systems for evaluating one-time programmable memory cells. A threshold current is applied to a resistive circuit, thereby generating a threshold voltage. A read current is applied to a first memory cell, thereby generating a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Low, Khim L, Brooks, Todd L, Woo, Agnes, Ito, Akira
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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