Fabrication method of semiconductor integrated circuit device

The present invention relates to a technology for fabricating a semiconductor device, and particularly to a technology effective for application to a technology for manufacturing a semiconductor device, using a photolithography method. An average value of dimensions of resist patterns formed each ti...

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Bibliographische Detailangaben

Hauptverfasser:	Tokorozuki, Kazuyuki, Yokouchi, Tetsuji, Miyamoto, Yoshiyuki, Yamamoto, Koji
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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