Pre-charge method for reading a non-volatile memory cell

The present invention relates generally to flash memory cell devices and more specifically, to improvements in pre-charge reading methods for reading a charge previously stored in a dual bit dielectric memory cell structure. A method of detecting a charge stored on a charge storage region of a first...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	He, Yi, Runnion, Edward F, Liu, Zhizheng, Randolph, Mark W, Hamilton, Darlene G, Chen, Pauling, Le, Binh
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!