Diffusion barrier layer and semiconductor device containing same

A diffusion barrier layer and semiconductor device containing same are described herein. More particularly, a novel diffusion barrier layer formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being more concentrated near the lower and upper surfaces of the diffusion barrier layer, i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Cohen, Stephan Alan, Dalton, Timothy Joseph, Fitzsimmons, John Anthony, Gates, Stephen McConnell, Gignac, Lynne M, Jamison, Paul Charles, Lee, Kang-Wook, Purushothaman, Sampath, Restaino, Darryl D, Simonyi, Eva, Wildman, Horatio Seymour
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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