Hermetic silicon carbide

Hermetic silicon carbide

The invention is related to the field of hermetic barrier layers in integrated circuits, in particular, silicon carbide barrier layers. Hermetic amorphous doped silicon carbide is deposited on an integrated circuit substrate in a PECVD reactor. Nitrogen-doping of an SiC film is conducted by flowing...

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Hauptverfasser: Fu, Haiying, Wong, Ka Shun, Tang, Xingyuan, Huang, Judy Hsiu-Chih, van Schravendijk, Bart Jan
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Sprache:eng
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creator Fu, Haiying
Wong, Ka Shun
Tang, Xingyuan
Huang, Judy Hsiu-Chih
van Schravendijk, Bart Jan
description The invention is related to the field of hermetic barrier layers in integrated circuits, in particular, silicon carbide barrier layers. Hermetic amorphous doped silicon carbide is deposited on an integrated circuit substrate in a PECVD reactor. Nitrogen-doping of an SiC film is conducted by flowing nitrogen-containing molecules, preferably nitrogen or ammonia gas, into the reactor chamber together with an organosilane, preferably tetramethylsilane, and forming a plasma. Oxygen-doping is conducted by flowing oxygen-containing molecules into the reaction chamber.
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title Hermetic silicon carbide
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