EUVL mask structure and method of formation

1. Technical Field An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially refl...

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Bibliographische Detailangaben

Hauptverfasser:	Fisch, Emily E, Kindt, Louis M, Levin, James P, Schmidt, Michael R, Williams, Carey T
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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