Chemical mechanical polishing thickness control in magnetic head fabrication

Chemical mechanical polishing thickness control in magnetic head fabrication

1. Field of the Invention The method for controlling the depth of polishing during a CMP process involves the deposition of a polishing stop layer at an appropriate point in the device fabrication process. The stop layer is comprised of a substance that is substantially more resistant to polishing w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Hsiao, Richard, Nguyen, Son Van, Pham, Thao, Zhao, Eugene
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Hsiao, Richard
Nguyen, Son Van
Pham, Thao
Zhao, Eugene
description 1. Field of the Invention The method for controlling the depth of polishing during a CMP process involves the deposition of a polishing stop layer at an appropriate point in the device fabrication process. The stop layer is comprised of a substance that is substantially more resistant to polishing with a particular polishing slurry that is utilized in the CMP process than a polishable material layer. Preferred stop layer materials of the present invention are tantalum and diamond-like carbon (DLC), and the polishable layer may consist of alumina. In one embodiment of the present invention the stop layer is deposited directly onto the top surface of components to be protected during the CMP process. A polishable layer is thereafter deposited upon the stop layer, and the CMP polishing step removes the polishable material layer down to the portions of the stop layer that are deposited upon the top surfaces of the components. The stop layer is thereafter removed from the top surface of the components. In this embodiment, the fabricated height of the components is preserved.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06776917</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06776917</sourcerecordid><originalsourceid>FETCH-uspatents_grants_067769173</originalsourceid><addsrcrecordid>eNqNizsOwjAMQLMwIOAOvgBSEVIj5grE0JEdmeAmFolTxeb-fMQBmN4b3lu6cUhUOGCGQiGhfHWumTWxRLDE4SGkCqGKtZqBBQpGIeMAifAOE97a-zKusnaLCbPS5seVg9PxMpy3T53RSEyvseEHXe99f9j5_R_JC4WLNx8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Chemical mechanical polishing thickness control in magnetic head fabrication</title><source>USPTO Issued Patents</source><creator>Hsiao, Richard ; Nguyen, Son Van ; Pham, Thao ; Zhao, Eugene</creator><creatorcontrib>Hsiao, Richard ; Nguyen, Son Van ; Pham, Thao ; Zhao, Eugene ; International Business Machines Corporation</creatorcontrib><description>1. Field of the Invention The method for controlling the depth of polishing during a CMP process involves the deposition of a polishing stop layer at an appropriate point in the device fabrication process. The stop layer is comprised of a substance that is substantially more resistant to polishing with a particular polishing slurry that is utilized in the CMP process than a polishable material layer. Preferred stop layer materials of the present invention are tantalum and diamond-like carbon (DLC), and the polishable layer may consist of alumina. In one embodiment of the present invention the stop layer is deposited directly onto the top surface of components to be protected during the CMP process. A polishable layer is thereafter deposited upon the stop layer, and the CMP polishing step removes the polishable material layer down to the portions of the stop layer that are deposited upon the top surfaces of the components. The stop layer is thereafter removed from the top surface of the components. In this embodiment, the fabricated height of the components is preserved.</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6776917$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6776917$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hsiao, Richard</creatorcontrib><creatorcontrib>Nguyen, Son Van</creatorcontrib><creatorcontrib>Pham, Thao</creatorcontrib><creatorcontrib>Zhao, Eugene</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><title>Chemical mechanical polishing thickness control in magnetic head fabrication</title><description>1. Field of the Invention The method for controlling the depth of polishing during a CMP process involves the deposition of a polishing stop layer at an appropriate point in the device fabrication process. The stop layer is comprised of a substance that is substantially more resistant to polishing with a particular polishing slurry that is utilized in the CMP process than a polishable material layer. Preferred stop layer materials of the present invention are tantalum and diamond-like carbon (DLC), and the polishable layer may consist of alumina. In one embodiment of the present invention the stop layer is deposited directly onto the top surface of components to be protected during the CMP process. A polishable layer is thereafter deposited upon the stop layer, and the CMP polishing step removes the polishable material layer down to the portions of the stop layer that are deposited upon the top surfaces of the components. The stop layer is thereafter removed from the top surface of the components. In this embodiment, the fabricated height of the components is preserved.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNizsOwjAMQLMwIOAOvgBSEVIj5grE0JEdmeAmFolTxeb-fMQBmN4b3lu6cUhUOGCGQiGhfHWumTWxRLDE4SGkCqGKtZqBBQpGIeMAifAOE97a-zKusnaLCbPS5seVg9PxMpy3T53RSEyvseEHXe99f9j5_R_JC4WLNx8</recordid><startdate>20040817</startdate><enddate>20040817</enddate><creator>Hsiao, Richard</creator><creator>Nguyen, Son Van</creator><creator>Pham, Thao</creator><creator>Zhao, Eugene</creator><scope>EFH</scope></search><sort><creationdate>20040817</creationdate><title>Chemical mechanical polishing thickness control in magnetic head fabrication</title><author>Hsiao, Richard ; Nguyen, Son Van ; Pham, Thao ; Zhao, Eugene</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_067769173</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Hsiao, Richard</creatorcontrib><creatorcontrib>Nguyen, Son Van</creatorcontrib><creatorcontrib>Pham, Thao</creatorcontrib><creatorcontrib>Zhao, Eugene</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hsiao, Richard</au><au>Nguyen, Son Van</au><au>Pham, Thao</au><au>Zhao, Eugene</au><aucorp>International Business Machines Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chemical mechanical polishing thickness control in magnetic head fabrication</title><date>2004-08-17</date><risdate>2004</risdate><abstract>1. Field of the Invention The method for controlling the depth of polishing during a CMP process involves the deposition of a polishing stop layer at an appropriate point in the device fabrication process. The stop layer is comprised of a substance that is substantially more resistant to polishing with a particular polishing slurry that is utilized in the CMP process than a polishable material layer. Preferred stop layer materials of the present invention are tantalum and diamond-like carbon (DLC), and the polishable layer may consist of alumina. In one embodiment of the present invention the stop layer is deposited directly onto the top surface of components to be protected during the CMP process. A polishable layer is thereafter deposited upon the stop layer, and the CMP polishing step removes the polishable material layer down to the portions of the stop layer that are deposited upon the top surfaces of the components. The stop layer is thereafter removed from the top surface of the components. In this embodiment, the fabricated height of the components is preserved.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_06776917
source USPTO Issued Patents
title Chemical mechanical polishing thickness control in magnetic head fabrication
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T06%3A22%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Hsiao,%20Richard&rft.aucorp=International%20Business%20Machines%20Corporation&rft.date=2004-08-17&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06776917%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true