Method and structures for dual depth oxygen layers in silicon-on-insulator processes

1. Technical Field A semiconductor structure, and associated method of fabrication, comprising a substrate having a continuous buried oxide layer and having a plurality of trench isolation structures. The buried oxide layer may be located at more than one depth within the substrate. The geometry of...

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Bibliographische Detailangaben

Hauptverfasser:	Brown, Jeffrey Scott, Bryant, Andres, Gauthier, Jr., Robert J, Mann, Randy William, Voldman, Steven Howard
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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