Method and system for rotating a semiconductor wafer in processing chambers
Integrated circuit chips are typically formed on semiconductor wafers. Various layers of different materials are built on the wafers in various different types of chambers. Such chambers can include rapid thermal processing chambers and chemical vapor deposition chambers. In a chemical vapor deposit...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Integrated circuit chips are typically formed on semiconductor wafers. Various layers of different materials are built on the wafers in various different types of chambers. Such chambers can include rapid thermal processing chambers and chemical vapor deposition chambers. In a chemical vapor deposition chamber, a gas or vapor is fed into the chamber which reacts with the surface of the wafer.
The present invention is generally directed to a system and process for rotating semiconductor wafers in thermal processing chambers, such as rapid thermal processing chambers and chemical vapor deposition chambers. In accordance with the present invention, a semiconductor wafer is supported on a substrate holder which, in turn, is supported on a rotor. During processing, the rotor is magnetically levitated and magnetically rotated by suspension actuators and rotation actuators positioned outside of the chamber. |
---|