Semiconductor device with boron containing carbon doped silicon oxide layer

Semiconductor device with boron containing carbon doped silicon oxide layer

The present invention relates to a method of forming a carbon doped oxide layer on a substrate, e.g., a substrate used to make a semiconductor device. A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition appara...

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1. Verfasser: Towle, Steven N
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creator Towle, Steven N
description The present invention relates to a method of forming a carbon doped oxide layer on a substrate, e.g., a substrate used to make a semiconductor device. A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a source of carbon, silicon, boron, and oxygen. That apparatus is then operated under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.
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title Semiconductor device with boron containing carbon doped silicon oxide layer
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