Method of fabricating integrated circuit devices having dielectric regions protected with multi-layer insulation structures

This application claims the benefit of Korean Application No. 2000-46615, filed Aug. 11, 2000, the disclosure of which is hereby incorporated herein by reference. A dielectric region, such as a ferroelectric dielectric region of an integrated circuit capacitor, is protected by a multi-layer insulati...

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Hauptverfasser:	Cho, Hag-ju, An, Hyeong-geun
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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