Integrated circuit structure
1. Technical Field A semiconductor chip carrier having an increased chip connector and plated through hole density. In particular, a substrate having a plurality of plated through holes therein, and a fatigue resistant redistribution layer thereon. The redistribution layer includes a plurality of vi...
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creator | Alcoe, David J Downes, Jr., Francis J Jones, Gerald W Kresge, John S Tytran-Palomaki, Cheryl L |
description | 1. Technical Field
A semiconductor chip carrier having an increased chip connector and plated through hole density. In particular, a substrate having a plurality of plated through holes therein, and a fatigue resistant redistribution layer thereon. The redistribution layer includes a plurality of vias selectively positioned over and contacting the plated through holes. The substrate further including a ground plane, two pair of signal planes, and two pair of power planes, wherein the second pair of power planes are located directly underneath the external dielectric layer. A buried plated through hole within the substrate. |
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A semiconductor chip carrier having an increased chip connector and plated through hole density. In particular, a substrate having a plurality of plated through holes therein, and a fatigue resistant redistribution layer thereon. The redistribution layer includes a plurality of vias selectively positioned over and contacting the plated through holes. The substrate further including a ground plane, two pair of signal planes, and two pair of power planes, wherein the second pair of power planes are located directly underneath the external dielectric layer. A buried plated through hole within the substrate.</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6720502$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,309,781,803,886,64041</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6720502$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Alcoe, David J</creatorcontrib><creatorcontrib>Downes, Jr., Francis J</creatorcontrib><creatorcontrib>Jones, Gerald W</creatorcontrib><creatorcontrib>Kresge, John S</creatorcontrib><creatorcontrib>Tytran-Palomaki, Cheryl L</creatorcontrib><creatorcontrib>International Business Machine Corporation</creatorcontrib><title>Integrated circuit structure</title><description>1. Technical Field
A semiconductor chip carrier having an increased chip connector and plated through hole density. In particular, a substrate having a plurality of plated through holes therein, and a fatigue resistant redistribution layer thereon. The redistribution layer includes a plurality of vias selectively positioned over and contacting the plated through holes. The substrate further including a ground plane, two pair of signal planes, and two pair of power planes, wherein the second pair of power planes are located directly underneath the external dielectric layer. A buried plated through hole within the substrate.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZJDxzCtJTS9KLElNUUjOLEouzSxRKC4pKk0uKS1K5WFgTUvMKU7lhdLcDApuriHOHrqlxQVAHXklxfFArSDKwMzcyMDUwMiYCCUArqglCA</recordid><startdate>20040413</startdate><enddate>20040413</enddate><creator>Alcoe, David J</creator><creator>Downes, Jr., Francis J</creator><creator>Jones, Gerald W</creator><creator>Kresge, John S</creator><creator>Tytran-Palomaki, Cheryl L</creator><scope>EFH</scope></search><sort><creationdate>20040413</creationdate><title>Integrated circuit structure</title><author>Alcoe, David J ; Downes, Jr., Francis J ; Jones, Gerald W ; Kresge, John S ; Tytran-Palomaki, Cheryl L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_067205023</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Alcoe, David J</creatorcontrib><creatorcontrib>Downes, Jr., Francis J</creatorcontrib><creatorcontrib>Jones, Gerald W</creatorcontrib><creatorcontrib>Kresge, John S</creatorcontrib><creatorcontrib>Tytran-Palomaki, Cheryl L</creatorcontrib><creatorcontrib>International Business Machine Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Alcoe, David J</au><au>Downes, Jr., Francis J</au><au>Jones, Gerald W</au><au>Kresge, John S</au><au>Tytran-Palomaki, Cheryl L</au><aucorp>International Business Machine Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Integrated circuit structure</title><date>2004-04-13</date><risdate>2004</risdate><abstract>1. Technical Field
A semiconductor chip carrier having an increased chip connector and plated through hole density. In particular, a substrate having a plurality of plated through holes therein, and a fatigue resistant redistribution layer thereon. The redistribution layer includes a plurality of vias selectively positioned over and contacting the plated through holes. The substrate further including a ground plane, two pair of signal planes, and two pair of power planes, wherein the second pair of power planes are located directly underneath the external dielectric layer. A buried plated through hole within the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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title | Integrated circuit structure |
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