Method for manufacturing a nonvolatile semiconductor storage device
1. Technical Field of the Invention According to the present invention, a method for manufacturing a nonvolatile semiconductor storage device is provided in which an element separating layer and first gate insulating layer are respectively formed onto a silicon base, followed by layering and pattern...
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| creator | Kodama, Noriaki |
| description | 1. Technical Field of the Invention
According to the present invention, a method for manufacturing a nonvolatile semiconductor storage device is provided in which an element separating layer and first gate insulating layer are respectively formed onto a silicon base, followed by layering and patterning of a first polysilicon layer. A second gate insulating layer for forming an ONO structure and a second polysilicon layer are then sequentially formed and patterned. After formation of a gate oxide layer, a third polysilicon layer is layered and patterned to form a gate electrode. The second and first polysilicon layers are then patterned to respectively form control gate and floating gate. |
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According to the present invention, a method for manufacturing a nonvolatile semiconductor storage device is provided in which an element separating layer and first gate insulating layer are respectively formed onto a silicon base, followed by layering and patterning of a first polysilicon layer. A second gate insulating layer for forming an ONO structure and a second polysilicon layer are then sequentially formed and patterned. After formation of a gate oxide layer, a third polysilicon layer is layered and patterned to form a gate electrode. The second and first polysilicon layers are then patterned to respectively form control gate and floating gate.</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6706593$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,309,781,803,886,64044</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6706593$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kodama, Noriaki</creatorcontrib><creatorcontrib>NEC Electroincs Corporation</creatorcontrib><title>Method for manufacturing a nonvolatile semiconductor storage device</title><description>1. Technical Field of the Invention
According to the present invention, a method for manufacturing a nonvolatile semiconductor storage device is provided in which an element separating layer and first gate insulating layer are respectively formed onto a silicon base, followed by layering and patterning of a first polysilicon layer. A second gate insulating layer for forming an ONO structure and a second polysilicon layer are then sequentially formed and patterned. After formation of a gate oxide layer, a third polysilicon layer is layered and patterned to form a gate electrode. The second and first polysilicon layers are then patterned to respectively form control gate and floating gate.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZHD2TS3JyE9RSMsvUshNzCtNS0wuKS3KzEtXSFTIy88ry89JLMnMSVUoTs3NTM7PSylNLgGqLAYSiempCimpZZnJqTwMrGmJOcWpvFCam0HBzTXE2UO3tLggsSQ1r6Q4Pr0oEUQZmJkbmJlaGhsToQQAju80DA</recordid><startdate>20040316</startdate><enddate>20040316</enddate><creator>Kodama, Noriaki</creator><scope>EFH</scope></search><sort><creationdate>20040316</creationdate><title>Method for manufacturing a nonvolatile semiconductor storage device</title><author>Kodama, Noriaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_067065933</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Kodama, Noriaki</creatorcontrib><creatorcontrib>NEC Electroincs Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kodama, Noriaki</au><aucorp>NEC Electroincs Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for manufacturing a nonvolatile semiconductor storage device</title><date>2004-03-16</date><risdate>2004</risdate><abstract>1. Technical Field of the Invention
According to the present invention, a method for manufacturing a nonvolatile semiconductor storage device is provided in which an element separating layer and first gate insulating layer are respectively formed onto a silicon base, followed by layering and patterning of a first polysilicon layer. A second gate insulating layer for forming an ONO structure and a second polysilicon layer are then sequentially formed and patterned. After formation of a gate oxide layer, a third polysilicon layer is layered and patterned to form a gate electrode. The second and first polysilicon layers are then patterned to respectively form control gate and floating gate.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Method for manufacturing a nonvolatile semiconductor storage device |
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