Method for a plan-view transmission electron microscopy sample preparation technique for via and contact characterization
1. Field of the Invention A method for preparing a transmission electron microscopy (TEM) sample for contact and via characterization. Specifically, one embodiment of the present invention discloses a method where an integrated circuit semiconductor chip (IC chip) is bonded to a piece of glass and a...
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creator | Jiyan, Dai Foong, Tee Siam Lam, Tai Chui Er, Eddie Redkar, Shailesh |
description | 1. Field of the Invention
A method for preparing a transmission electron microscopy (TEM) sample for contact and via characterization. Specifically, one embodiment of the present invention discloses a method where an integrated circuit semiconductor chip (IC chip) is bonded to a piece of glass and attached to a sample holder. Areas of the IC chip are removed by polishing until a region surrounding a particular contact or via is exposed. The piece of glass supports the IC chip during the polishing process. The IC chip is cut using a focused ion beam to create a thin membrane suitable for TEM failure analysis. The thin membrane includes a plan-view cross-section from the particular contact or via. The cross-sectional plan-view is perpendicular to the longitudinal axis of the contact or via. |
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A method for preparing a transmission electron microscopy (TEM) sample for contact and via characterization. Specifically, one embodiment of the present invention discloses a method where an integrated circuit semiconductor chip (IC chip) is bonded to a piece of glass and attached to a sample holder. Areas of the IC chip are removed by polishing until a region surrounding a particular contact or via is exposed. The piece of glass supports the IC chip during the polishing process. The IC chip is cut using a focused ion beam to create a thin membrane suitable for TEM failure analysis. The thin membrane includes a plan-view cross-section from the particular contact or via. The cross-sectional plan-view is perpendicular to the longitudinal axis of the contact or via.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNzjEKwkAQBdA0FqLeYS4QCESCvSg2dvYyTCZmYbO7zkwi8fSuwQNY_V88Pn9dzFe2PrbQRQGE5DGUk-MXmGDQwam6GIA9k0kugyOJSjHNoDgkz5CEEwralxlTH9xz5GVtcggYWqAYDMmA-uzIWNx74dti1aFX3v1yU8D5dDteylETGgfT-yOfyFE1zaGuq339B_kANsVIsg</recordid><startdate>20040127</startdate><enddate>20040127</enddate><creator>Jiyan, Dai</creator><creator>Foong, Tee Siam</creator><creator>Lam, Tai Chui</creator><creator>Er, Eddie</creator><creator>Redkar, Shailesh</creator><scope>EFH</scope></search><sort><creationdate>20040127</creationdate><title>Method for a plan-view transmission electron microscopy sample preparation technique for via and contact characterization</title><author>Jiyan, Dai ; Foong, Tee Siam ; Lam, Tai Chui ; Er, Eddie ; Redkar, Shailesh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_066833043</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Jiyan, Dai</creatorcontrib><creatorcontrib>Foong, Tee Siam</creatorcontrib><creatorcontrib>Lam, Tai Chui</creatorcontrib><creatorcontrib>Er, Eddie</creatorcontrib><creatorcontrib>Redkar, Shailesh</creatorcontrib><creatorcontrib>Chartered Semiconductor Manufacturing Limited</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jiyan, Dai</au><au>Foong, Tee Siam</au><au>Lam, Tai Chui</au><au>Er, Eddie</au><au>Redkar, Shailesh</au><aucorp>Chartered Semiconductor Manufacturing Limited</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for a plan-view transmission electron microscopy sample preparation technique for via and contact characterization</title><date>2004-01-27</date><risdate>2004</risdate><abstract>1. Field of the Invention
A method for preparing a transmission electron microscopy (TEM) sample for contact and via characterization. Specifically, one embodiment of the present invention discloses a method where an integrated circuit semiconductor chip (IC chip) is bonded to a piece of glass and attached to a sample holder. Areas of the IC chip are removed by polishing until a region surrounding a particular contact or via is exposed. The piece of glass supports the IC chip during the polishing process. The IC chip is cut using a focused ion beam to create a thin membrane suitable for TEM failure analysis. The thin membrane includes a plan-view cross-section from the particular contact or via. The cross-sectional plan-view is perpendicular to the longitudinal axis of the contact or via.</abstract><oa>free_for_read</oa></addata></record> |
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title | Method for a plan-view transmission electron microscopy sample preparation technique for via and contact characterization |
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