Highly linear integrated resistive contact

This invention relates to the insertion of resistors in integrated-circuit memory or logic, specifically as related to semiconductor contacts. A semiconductor device or integrated circuit has high and low resistive contacts. Mobility spoiling ions such as carbon are implanted into all contacts of the substrate. High resistive contacts are temporarily covered with an oxide during processing to prevent silicide from forming due to interaction between a siliciding metal and the implanted mobility spoiling ions in the contacts. The resulting high resistance contacts have highly linear I-V curves, even at high voltages. Selective silicide formation converts some of the contacts back to low resistance contacts as a result of interaction between a siliciding metal and the implanted mobility spoiling ions in the low resistance contacts.