OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration

OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration

1. Technical Field A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for...

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Hauptverfasser: Ahrens, Marco, Maurer, Wilhelm, Knobloch, Juergen, Zimmermann, Rainer
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Sprache:eng
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creator Ahrens, Marco
Maurer, Wilhelm
Knobloch, Juergen
Zimmermann, Rainer
description 1. Technical Field A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06664010</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06664010</sourcerecordid><originalsourceid>FETCH-uspatents_grants_066640103</originalsourceid><addsrcrecordid>eNqNjj0KwkAQhdNYiHqHuUAgouQCQbHTwl6Gzexm0N0NMxOv4nVNoo2d1YPH936Wxet8aSCSdbkFnwUCJRI0TgFcFiFn1EKPZiRJZwKh71Cp1I79zEXUO2BqgU3BhGP8cVE1O8app6UnO_qwySjI7DoWN7CNe8lzGKb1nNbFwuNDafPVVQHHw7U5lYOObyiZ3sb4JFVd1_tqW-3-QN5hBVLg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration</title><source>USPTO Issued Patents</source><creator>Ahrens, Marco ; Maurer, Wilhelm ; Knobloch, Juergen ; Zimmermann, Rainer</creator><creatorcontrib>Ahrens, Marco ; Maurer, Wilhelm ; Knobloch, Juergen ; Zimmermann, Rainer ; Infineon Technologies AG</creatorcontrib><description>1. Technical Field A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6664010$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64014</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6664010$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ahrens, Marco</creatorcontrib><creatorcontrib>Maurer, Wilhelm</creatorcontrib><creatorcontrib>Knobloch, Juergen</creatorcontrib><creatorcontrib>Zimmermann, Rainer</creatorcontrib><creatorcontrib>Infineon Technologies AG</creatorcontrib><title>OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration</title><description>1. Technical Field A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNjj0KwkAQhdNYiHqHuUAgouQCQbHTwl6Gzexm0N0NMxOv4nVNoo2d1YPH936Wxet8aSCSdbkFnwUCJRI0TgFcFiFn1EKPZiRJZwKh71Cp1I79zEXUO2BqgU3BhGP8cVE1O8app6UnO_qwySjI7DoWN7CNe8lzGKb1nNbFwuNDafPVVQHHw7U5lYOObyiZ3sb4JFVd1_tqW-3-QN5hBVLg</recordid><startdate>20031216</startdate><enddate>20031216</enddate><creator>Ahrens, Marco</creator><creator>Maurer, Wilhelm</creator><creator>Knobloch, Juergen</creator><creator>Zimmermann, Rainer</creator><scope>EFH</scope></search><sort><creationdate>20031216</creationdate><title>OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration</title><author>Ahrens, Marco ; Maurer, Wilhelm ; Knobloch, Juergen ; Zimmermann, Rainer</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_066640103</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Ahrens, Marco</creatorcontrib><creatorcontrib>Maurer, Wilhelm</creatorcontrib><creatorcontrib>Knobloch, Juergen</creatorcontrib><creatorcontrib>Zimmermann, Rainer</creatorcontrib><creatorcontrib>Infineon Technologies AG</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ahrens, Marco</au><au>Maurer, Wilhelm</au><au>Knobloch, Juergen</au><au>Zimmermann, Rainer</au><aucorp>Infineon Technologies AG</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration</title><date>2003-12-16</date><risdate>2003</risdate><abstract>1. Technical Field A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.</abstract><oa>free_for_read</oa></addata></record>
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title OPC method for generating corrected patterns for a phase-shifting mask and its trimming mask and associated device and integrated circuit configuration
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T08%3A44%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ahrens,%20Marco&rft.aucorp=Infineon%20Technologies%20AG&rft.date=2003-12-16&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06664010%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true