Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof
The present invention relates to a carbon film, and particularly relates to a carbon film containing, in addition to carbon, fluorine and hydrogen, a carbon film containing, in addition to carbon, hydrogen and nitrogen, a carbon film containing, in addition to carbon, hydrogen and at least one of me...
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creator | Murakami, Yasuo Nakahigashi, Takahiro Takeuchi, Jo |
description | The present invention relates to a carbon film, and particularly relates to a carbon film containing, in addition to carbon, fluorine and hydrogen, a carbon film containing, in addition to carbon, hydrogen and nitrogen, a carbon film containing, in addition to carbon, hydrogen and at least one of metal, metal compound, silicon and silicon compound as well as a method of forming the same, an object coated with a carbon film, and a method of manufacturing the same.
A carbon film containing fluorine and hydrogen, wherein a spectrum determined by FT-IR (Fourier Transform Infrared) spectrum analysis exhibits such a relationship that a ratio (IR.C-F)/(IR.C-H) between a peak area (IR.C-F) in a range from 1000 cmresulting from C-F bonds and a peak area (IR.C-H) in a range from 2800 cmto 3100 cmresulting from C-H bonds is larger than 0, and a spectrum determined by XPS (X-ray photoelectron spectrum analysis) exhibits such a relationship that a ratio (F/C) between a peak intensity resulting from Fand a peak intensity resulting from Cis larger than 0 and smaller than 3. A carbon film containing hydrogen and nitrogen. A carbon film containing at least one of metal, metal compound, silicon and silicon compound. |
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A carbon film containing fluorine and hydrogen, wherein a spectrum determined by FT-IR (Fourier Transform Infrared) spectrum analysis exhibits such a relationship that a ratio (IR.C-F)/(IR.C-H) between a peak area (IR.C-F) in a range from 1000 cmresulting from C-F bonds and a peak area (IR.C-H) in a range from 2800 cmto 3100 cmresulting from C-H bonds is larger than 0, and a spectrum determined by XPS (X-ray photoelectron spectrum analysis) exhibits such a relationship that a ratio (F/C) between a peak intensity resulting from Fand a peak intensity resulting from Cis larger than 0 and smaller than 3. A carbon film containing hydrogen and nitrogen. A carbon film containing at least one of metal, metal compound, silicon and silicon compound.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6652969$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,309,781,803,886,64044</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6652969$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Murakami, Yasuo</creatorcontrib><creatorcontrib>Nakahigashi, Takahiro</creatorcontrib><creatorcontrib>Takeuchi, Jo</creatorcontrib><creatorcontrib>Nissin Electric Co., LTD</creatorcontrib><title>Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof</title><description>The present invention relates to a carbon film, and particularly relates to a carbon film containing, in addition to carbon, fluorine and hydrogen, a carbon film containing, in addition to carbon, hydrogen and nitrogen, a carbon film containing, in addition to carbon, hydrogen and at least one of metal, metal compound, silicon and silicon compound as well as a method of forming the same, an object coated with a carbon film, and a method of manufacturing the same.
A carbon film containing fluorine and hydrogen, wherein a spectrum determined by FT-IR (Fourier Transform Infrared) spectrum analysis exhibits such a relationship that a ratio (IR.C-F)/(IR.C-H) between a peak area (IR.C-F) in a range from 1000 cmresulting from C-F bonds and a peak area (IR.C-H) in a range from 2800 cmto 3100 cmresulting from C-H bonds is larger than 0, and a spectrum determined by XPS (X-ray photoelectron spectrum analysis) exhibits such a relationship that a ratio (F/C) between a peak intensity resulting from Fand a peak intensity resulting from Cis larger than 0 and smaller than 3. A carbon film containing hydrogen and nitrogen. A carbon film containing at least one of metal, metal compound, silicon and silicon compound.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNjEsKAjEQRLNxIeod-gKCKAZmPSgewL20SccE8qPT6vWdgItx56J4UFW8paoj8r1kcCEmSCS-WHCFexJKmBbxxFQcYLaALMFEAlNeU2nhHcSDmRn6aWapTBX5x7NWC4ex0ebLlYLz6Tpets9WUShLuz0YO3ZaH_eDHg5_XD7i50RB</recordid><startdate>20031125</startdate><enddate>20031125</enddate><creator>Murakami, Yasuo</creator><creator>Nakahigashi, Takahiro</creator><creator>Takeuchi, Jo</creator><scope>EFH</scope></search><sort><creationdate>20031125</creationdate><title>Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof</title><author>Murakami, Yasuo ; Nakahigashi, Takahiro ; Takeuchi, Jo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_066529693</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Murakami, Yasuo</creatorcontrib><creatorcontrib>Nakahigashi, Takahiro</creatorcontrib><creatorcontrib>Takeuchi, Jo</creatorcontrib><creatorcontrib>Nissin Electric Co., LTD</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Murakami, Yasuo</au><au>Nakahigashi, Takahiro</au><au>Takeuchi, Jo</au><aucorp>Nissin Electric Co., LTD</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof</title><date>2003-11-25</date><risdate>2003</risdate><abstract>The present invention relates to a carbon film, and particularly relates to a carbon film containing, in addition to carbon, fluorine and hydrogen, a carbon film containing, in addition to carbon, hydrogen and nitrogen, a carbon film containing, in addition to carbon, hydrogen and at least one of metal, metal compound, silicon and silicon compound as well as a method of forming the same, an object coated with a carbon film, and a method of manufacturing the same.
A carbon film containing fluorine and hydrogen, wherein a spectrum determined by FT-IR (Fourier Transform Infrared) spectrum analysis exhibits such a relationship that a ratio (IR.C-F)/(IR.C-H) between a peak area (IR.C-F) in a range from 1000 cmresulting from C-F bonds and a peak area (IR.C-H) in a range from 2800 cmto 3100 cmresulting from C-H bonds is larger than 0, and a spectrum determined by XPS (X-ray photoelectron spectrum analysis) exhibits such a relationship that a ratio (F/C) between a peak intensity resulting from Fand a peak intensity resulting from Cis larger than 0 and smaller than 3. A carbon film containing hydrogen and nitrogen. A carbon film containing at least one of metal, metal compound, silicon and silicon compound.</abstract><oa>free_for_read</oa></addata></record> |
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title | Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof |
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