ESD protection by a high-to-low resistance shunt

ESD protection by a high-to-low resistance shunt

This application relates to magnetic disc drives and more particularly to the protection of thin film sensors, such as magnetoresistive head structures, from damage caused by damaging electrical transients, such as electrostatic discharge. A method and apparatus for protecting a thin film sensor suc...

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Hauptverfasser: Karr, Brian William, Stover, Lance Eugene, Hintz, Michael Berry
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Sprache:eng
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creator Karr, Brian William
Stover, Lance Eugene
Hintz, Michael Berry
description This application relates to magnetic disc drives and more particularly to the protection of thin film sensors, such as magnetoresistive head structures, from damage caused by damaging electrical transients, such as electrostatic discharge. A method and apparatus for protecting a thin film sensor such as a magnetoresistive head from damaging electrical transients, such as electrostatic discharge. A thin film sensor assembly includes a thin film sensor in electrical contact with a first and a second electrical contact. A shunting structure is deposited between and in electrical communication with the first and second electrical contacts such that the shunting structure as deposited is a high resistance path between the first and second electrical contacts and does not electrically short the first and second electrical contacts. Heat treating the shunting structure then forms a low resistance path between the first and second electrical contacts to provide protection of the sensor from electrostatic discharge.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06650519</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06650519</sourcerecordid><originalsourceid>FETCH-uspatents_grants_066505193</originalsourceid><addsrcrecordid>eNrjZDBwDXZRKCjKL0lNLsnMz1NIqlRIVMjITM_QLcnXzckvVyhKLc4sLknMS05VKM4ozSvhYWBNS8wpTuWF0twMCm6uIc4euqXFBYklqXklxfHpRYkgysDMzNTA1NDSmAglAPQZK7Y</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ESD protection by a high-to-low resistance shunt</title><source>USPTO Issued Patents</source><creator>Karr, Brian William ; Stover, Lance Eugene ; Hintz, Michael Berry</creator><creatorcontrib>Karr, Brian William ; Stover, Lance Eugene ; Hintz, Michael Berry ; Seagate Technology LLC</creatorcontrib><description>This application relates to magnetic disc drives and more particularly to the protection of thin film sensors, such as magnetoresistive head structures, from damage caused by damaging electrical transients, such as electrostatic discharge. A method and apparatus for protecting a thin film sensor such as a magnetoresistive head from damaging electrical transients, such as electrostatic discharge. A thin film sensor assembly includes a thin film sensor in electrical contact with a first and a second electrical contact. A shunting structure is deposited between and in electrical communication with the first and second electrical contacts such that the shunting structure as deposited is a high resistance path between the first and second electrical contacts and does not electrically short the first and second electrical contacts. Heat treating the shunting structure then forms a low resistance path between the first and second electrical contacts to provide protection of the sensor from electrostatic discharge.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6650519$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6650519$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Karr, Brian William</creatorcontrib><creatorcontrib>Stover, Lance Eugene</creatorcontrib><creatorcontrib>Hintz, Michael Berry</creatorcontrib><creatorcontrib>Seagate Technology LLC</creatorcontrib><title>ESD protection by a high-to-low resistance shunt</title><description>This application relates to magnetic disc drives and more particularly to the protection of thin film sensors, such as magnetoresistive head structures, from damage caused by damaging electrical transients, such as electrostatic discharge. A method and apparatus for protecting a thin film sensor such as a magnetoresistive head from damaging electrical transients, such as electrostatic discharge. A thin film sensor assembly includes a thin film sensor in electrical contact with a first and a second electrical contact. A shunting structure is deposited between and in electrical communication with the first and second electrical contacts such that the shunting structure as deposited is a high resistance path between the first and second electrical contacts and does not electrically short the first and second electrical contacts. Heat treating the shunting structure then forms a low resistance path between the first and second electrical contacts to provide protection of the sensor from electrostatic discharge.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZDBwDXZRKCjKL0lNLsnMz1NIqlRIVMjITM_QLcnXzckvVyhKLc4sLknMS05VKM4ozSvhYWBNS8wpTuWF0twMCm6uIc4euqXFBYklqXklxfHpRYkgysDMzNTA1NDSmAglAPQZK7Y</recordid><startdate>20031118</startdate><enddate>20031118</enddate><creator>Karr, Brian William</creator><creator>Stover, Lance Eugene</creator><creator>Hintz, Michael Berry</creator><scope>EFH</scope></search><sort><creationdate>20031118</creationdate><title>ESD protection by a high-to-low resistance shunt</title><author>Karr, Brian William ; Stover, Lance Eugene ; Hintz, Michael Berry</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_066505193</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Karr, Brian William</creatorcontrib><creatorcontrib>Stover, Lance Eugene</creatorcontrib><creatorcontrib>Hintz, Michael Berry</creatorcontrib><creatorcontrib>Seagate Technology LLC</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Karr, Brian William</au><au>Stover, Lance Eugene</au><au>Hintz, Michael Berry</au><aucorp>Seagate Technology LLC</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ESD protection by a high-to-low resistance shunt</title><date>2003-11-18</date><risdate>2003</risdate><abstract>This application relates to magnetic disc drives and more particularly to the protection of thin film sensors, such as magnetoresistive head structures, from damage caused by damaging electrical transients, such as electrostatic discharge. A method and apparatus for protecting a thin film sensor such as a magnetoresistive head from damaging electrical transients, such as electrostatic discharge. A thin film sensor assembly includes a thin film sensor in electrical contact with a first and a second electrical contact. A shunting structure is deposited between and in electrical communication with the first and second electrical contacts such that the shunting structure as deposited is a high resistance path between the first and second electrical contacts and does not electrically short the first and second electrical contacts. Heat treating the shunting structure then forms a low resistance path between the first and second electrical contacts to provide protection of the sensor from electrostatic discharge.</abstract><oa>free_for_read</oa></addata></record>
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title ESD protection by a high-to-low resistance shunt
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T02%3A02%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Karr,%20Brian%20William&rft.aucorp=Seagate%20Technology%20LLC&rft.date=2003-11-18&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06650519%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true