Composition for removing side wall and method of removing side wall
The present invention relates to a composition for removing side wall and method of removing side wall, more specifically, the present invention relates to a composition for removing side wall, which can remove a side wall deposit (side wall) containing resist polymer and inorganic substances, gener...
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| creator | Ogata, Fujimaro Sugiyama, Tsutomu Miyahara, Kuniaki |
| description | The present invention relates to a composition for removing side wall and method of removing side wall, more specifically, the present invention relates to a composition for removing side wall, which can remove a side wall deposit (side wall) containing resist polymer and inorganic substances, generated at dry etching using halogen-type gas in the production process of a semiconductor, at a low temperature within a short time while not corroding the wiring material, a method of removing side wall using the composition and a method of producing semiconductor devices comprising the step of removing side wall using the composition.
A composition for removing side wall which includes an aqueous solution containing both nitric acid and at least one of carboxylic acids selected from the group consisting of polycarboxylic acid, aminocarboxylic acid, and salts thereof; a method of removing side wall; and a process for producing a semiconductor device. Use of the composition is effective in removing side wall at a low temperature in a short time in semiconductor device production without corroding the wiring material, e.g., an aluminium alloy. Thus, a semiconductor device having an aluminium alloy wiring which has undergone substantially no corrosion can be efficiently produced. |
| format | Patent |
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A composition for removing side wall which includes an aqueous solution containing both nitric acid and at least one of carboxylic acids selected from the group consisting of polycarboxylic acid, aminocarboxylic acid, and salts thereof; a method of removing side wall; and a process for producing a semiconductor device. Use of the composition is effective in removing side wall at a low temperature in a short time in semiconductor device production without corroding the wiring material, e.g., an aluminium alloy. Thus, a semiconductor device having an aluminium alloy wiring which has undergone substantially no corrosion can be efficiently produced.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6627553$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6627553$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ogata, Fujimaro</creatorcontrib><creatorcontrib>Sugiyama, Tsutomu</creatorcontrib><creatorcontrib>Miyahara, Kuniaki</creatorcontrib><creatorcontrib>Showa Denko K.K</creatorcontrib><title>Composition for removing side wall and method of removing side wall</title><description>The present invention relates to a composition for removing side wall and method of removing side wall, more specifically, the present invention relates to a composition for removing side wall, which can remove a side wall deposit (side wall) containing resist polymer and inorganic substances, generated at dry etching using halogen-type gas in the production process of a semiconductor, at a low temperature within a short time while not corroding the wiring material, a method of removing side wall using the composition and a method of producing semiconductor devices comprising the step of removing side wall using the composition.
A composition for removing side wall which includes an aqueous solution containing both nitric acid and at least one of carboxylic acids selected from the group consisting of polycarboxylic acid, aminocarboxylic acid, and salts thereof; a method of removing side wall; and a process for producing a semiconductor device. Use of the composition is effective in removing side wall at a low temperature in a short time in semiconductor device production without corroding the wiring material, e.g., an aluminium alloy. Thus, a semiconductor device having an aluminium alloy wiring which has undergone substantially no corrosion can be efficiently produced.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZHB2zs8tyC_OLMnMz1NIyy9SKErNzS_LzEtXKM5MSVUoT8zJUUjMS1HITS3JyE9RyE_DooCHgTUtMac4lRdKczMouLmGOHvolhYXJJak5pUUx6cXJYIoAzMzI3NTU2NjIpQAAD1wMzg</recordid><startdate>20030930</startdate><enddate>20030930</enddate><creator>Ogata, Fujimaro</creator><creator>Sugiyama, Tsutomu</creator><creator>Miyahara, Kuniaki</creator><scope>EFH</scope></search><sort><creationdate>20030930</creationdate><title>Composition for removing side wall and method of removing side wall</title><author>Ogata, Fujimaro ; Sugiyama, Tsutomu ; Miyahara, Kuniaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_066275533</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Ogata, Fujimaro</creatorcontrib><creatorcontrib>Sugiyama, Tsutomu</creatorcontrib><creatorcontrib>Miyahara, Kuniaki</creatorcontrib><creatorcontrib>Showa Denko K.K</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ogata, Fujimaro</au><au>Sugiyama, Tsutomu</au><au>Miyahara, Kuniaki</au><aucorp>Showa Denko K.K</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Composition for removing side wall and method of removing side wall</title><date>2003-09-30</date><risdate>2003</risdate><abstract>The present invention relates to a composition for removing side wall and method of removing side wall, more specifically, the present invention relates to a composition for removing side wall, which can remove a side wall deposit (side wall) containing resist polymer and inorganic substances, generated at dry etching using halogen-type gas in the production process of a semiconductor, at a low temperature within a short time while not corroding the wiring material, a method of removing side wall using the composition and a method of producing semiconductor devices comprising the step of removing side wall using the composition.
A composition for removing side wall which includes an aqueous solution containing both nitric acid and at least one of carboxylic acids selected from the group consisting of polycarboxylic acid, aminocarboxylic acid, and salts thereof; a method of removing side wall; and a process for producing a semiconductor device. Use of the composition is effective in removing side wall at a low temperature in a short time in semiconductor device production without corroding the wiring material, e.g., an aluminium alloy. Thus, a semiconductor device having an aluminium alloy wiring which has undergone substantially no corrosion can be efficiently produced.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Composition for removing side wall and method of removing side wall |
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