Aluminum hardmask for dielectric etch

The invention is generally related to the field of forming semiconductor devices and more specifically to hardmasks for dielectric etches, such as those used in forming copper interconnects. An aluminum hardmask () is used for etching a dielectric layer (). A fluorine-based etch is used that does no...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Brennan, Kenneth D
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Brennan, Kenneth D
description The invention is generally related to the field of forming semiconductor devices and more specifically to hardmasks for dielectric etches, such as those used in forming copper interconnects. An aluminum hardmask () is used for etching a dielectric layer (). A fluorine-based etch is used that does not etch the aluminum hardmask (). The aluminum hardmask () is then removed by CMP.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06620727</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06620727</sourcerecordid><originalsourceid>FETCH-uspatents_grants_066207273</originalsourceid><addsrcrecordid>eNrjZFB1zCnNzcwrzVXISCxKyU0szlZIyy9SSMlMzUlNLinKTFZILUnO4GFgTUvMKU7lhdLcDApuriHOHrqlxQWJJal5JcXx6UWJIMrAzMzIwNzI3JgIJQAeTygM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Aluminum hardmask for dielectric etch</title><source>USPTO Issued Patents</source><creator>Brennan, Kenneth D</creator><creatorcontrib>Brennan, Kenneth D ; Texas Instruments Incorporated</creatorcontrib><description>The invention is generally related to the field of forming semiconductor devices and more specifically to hardmasks for dielectric etches, such as those used in forming copper interconnects. An aluminum hardmask () is used for etching a dielectric layer (). A fluorine-based etch is used that does not etch the aluminum hardmask (). The aluminum hardmask () is then removed by CMP.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6620727$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,777,799,882,64018</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6620727$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Brennan, Kenneth D</creatorcontrib><creatorcontrib>Texas Instruments Incorporated</creatorcontrib><title>Aluminum hardmask for dielectric etch</title><description>The invention is generally related to the field of forming semiconductor devices and more specifically to hardmasks for dielectric etches, such as those used in forming copper interconnects. An aluminum hardmask () is used for etching a dielectric layer (). A fluorine-based etch is used that does not etch the aluminum hardmask (). The aluminum hardmask () is then removed by CMP.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZFB1zCnNzcwrzVXISCxKyU0szlZIyy9SSMlMzUlNLinKTFZILUnO4GFgTUvMKU7lhdLcDApuriHOHrqlxQWJJal5JcXx6UWJIMrAzMzIwNzI3JgIJQAeTygM</recordid><startdate>20030916</startdate><enddate>20030916</enddate><creator>Brennan, Kenneth D</creator><scope>EFH</scope></search><sort><creationdate>20030916</creationdate><title>Aluminum hardmask for dielectric etch</title><author>Brennan, Kenneth D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_066207273</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Brennan, Kenneth D</creatorcontrib><creatorcontrib>Texas Instruments Incorporated</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brennan, Kenneth D</au><aucorp>Texas Instruments Incorporated</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Aluminum hardmask for dielectric etch</title><date>2003-09-16</date><risdate>2003</risdate><abstract>The invention is generally related to the field of forming semiconductor devices and more specifically to hardmasks for dielectric etches, such as those used in forming copper interconnects. An aluminum hardmask () is used for etching a dielectric layer (). A fluorine-based etch is used that does not etch the aluminum hardmask (). The aluminum hardmask () is then removed by CMP.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_06620727
source USPTO Issued Patents
title Aluminum hardmask for dielectric etch
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T14%3A25%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Brennan,%20Kenneth%20D&rft.aucorp=Texas%20Instruments%20Incorporated&rft.date=2003-09-16&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06620727%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true