Aluminum hardmask for dielectric etch
The invention is generally related to the field of forming semiconductor devices and more specifically to hardmasks for dielectric etches, such as those used in forming copper interconnects. An aluminum hardmask () is used for etching a dielectric layer (). A fluorine-based etch is used that does no...
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creator | Brennan, Kenneth D |
description | The invention is generally related to the field of forming semiconductor devices and more specifically to hardmasks for dielectric etches, such as those used in forming copper interconnects.
An aluminum hardmask () is used for etching a dielectric layer (). A fluorine-based etch is used that does not etch the aluminum hardmask (). The aluminum hardmask () is then removed by CMP. |
format | Patent |
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An aluminum hardmask () is used for etching a dielectric layer (). A fluorine-based etch is used that does not etch the aluminum hardmask (). The aluminum hardmask () is then removed by CMP.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6620727$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,777,799,882,64018</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6620727$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Brennan, Kenneth D</creatorcontrib><creatorcontrib>Texas Instruments Incorporated</creatorcontrib><title>Aluminum hardmask for dielectric etch</title><description>The invention is generally related to the field of forming semiconductor devices and more specifically to hardmasks for dielectric etches, such as those used in forming copper interconnects.
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An aluminum hardmask () is used for etching a dielectric layer (). A fluorine-based etch is used that does not etch the aluminum hardmask (). The aluminum hardmask () is then removed by CMP.</abstract><oa>free_for_read</oa></addata></record> |
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title | Aluminum hardmask for dielectric etch |
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