Method for producing hydrogenated silicon oxycarbide films having low dielectric constant

This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce th...

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Bibliographische Detailangaben

Hauptverfasser:	Loboda, Mark Jon, Seifferly, Jeffrey Alan
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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