Memory cell with self-aligned floating gate and separate select gate, and fabrication process

This invention pertains generally to semiconductor devices and, more particularly, to a nonvolatile memory device and fabrication process. Memory cell having a floating gate with lateral edges which are aligned directly above edges of the active area in the substrate, a control gate positioned direc...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Chen, Chiou-Feng
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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