Method for improving performance of organic semiconductors in bottom electrode structure

Method for improving performance of organic semiconductors in bottom electrode structure

The present invention relates to a method for improving the performance of thin film organic circuits having a readily manufacturable structure in which an organic semiconducting material is formed on the surface of patterned electrodes. A method for improving the performance of an organic thin film...

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Hauptverfasser: Dimitrakopoulos, Christos Dimitrios, Kymissis, Ioannis, Purushothaman, Sampath
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creator Dimitrakopoulos, Christos Dimitrios
Kymissis, Ioannis
Purushothaman, Sampath
description The present invention relates to a method for improving the performance of thin film organic circuits having a readily manufacturable structure in which an organic semiconducting material is formed on the surface of patterned electrodes. A method for improving the performance of an organic thin film field effect transistor including the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, wherein R is a linear or branched, substituted or unsubstituted, alkyl, alkenyl, cycloalkyl or aromatic containing from about 6 to about 25 carbon atoms under conditions that are effective in forming a self-assembled monolayer of said thiol compound on said electrodes. Organic thin film transistor structures containing the self-assembled monolayer of the present invention are also disclosed.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06569707</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06569707</sourcerecordid><originalsourceid>FETCH-uspatents_grants_065697073</originalsourceid><addsrcrecordid>eNqNijEKAjEQAK-xEPUP-wHhQLzDWhQbOws7ickmBi67YXfj-z3BB1gNzMyyu1_RXhwgskAuVfidKUFFmUVx5BE4AktylD0oluyZQvPGopAJnmzGBXBCb8IBQU3m2gTX3SK6SXHz46qD8-l2vGybVmdIpo8k7ot-2A-HsR93fywf0jA8UA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for improving performance of organic semiconductors in bottom electrode structure</title><source>USPTO Issued Patents</source><creator>Dimitrakopoulos, Christos Dimitrios ; Kymissis, Ioannis ; Purushothaman, Sampath</creator><creatorcontrib>Dimitrakopoulos, Christos Dimitrios ; Kymissis, Ioannis ; Purushothaman, Sampath ; International Business Machines Corporation</creatorcontrib><description>The present invention relates to a method for improving the performance of thin film organic circuits having a readily manufacturable structure in which an organic semiconducting material is formed on the surface of patterned electrodes. A method for improving the performance of an organic thin film field effect transistor including the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, wherein R is a linear or branched, substituted or unsubstituted, alkyl, alkenyl, cycloalkyl or aromatic containing from about 6 to about 25 carbon atoms under conditions that are effective in forming a self-assembled monolayer of said thiol compound on said electrodes. Organic thin film transistor structures containing the self-assembled monolayer of the present invention are also disclosed.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6569707$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6569707$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Dimitrakopoulos, Christos Dimitrios</creatorcontrib><creatorcontrib>Kymissis, Ioannis</creatorcontrib><creatorcontrib>Purushothaman, Sampath</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><title>Method for improving performance of organic semiconductors in bottom electrode structure</title><description>The present invention relates to a method for improving the performance of thin film organic circuits having a readily manufacturable structure in which an organic semiconducting material is formed on the surface of patterned electrodes. A method for improving the performance of an organic thin film field effect transistor including the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, wherein R is a linear or branched, substituted or unsubstituted, alkyl, alkenyl, cycloalkyl or aromatic containing from about 6 to about 25 carbon atoms under conditions that are effective in forming a self-assembled monolayer of said thiol compound on said electrodes. Organic thin film transistor structures containing the self-assembled monolayer of the present invention are also disclosed.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNijEKAjEQAK-xEPUP-wHhQLzDWhQbOws7ickmBi67YXfj-z3BB1gNzMyyu1_RXhwgskAuVfidKUFFmUVx5BE4AktylD0oluyZQvPGopAJnmzGBXBCb8IBQU3m2gTX3SK6SXHz46qD8-l2vGybVmdIpo8k7ot-2A-HsR93fywf0jA8UA</recordid><startdate>20030527</startdate><enddate>20030527</enddate><creator>Dimitrakopoulos, Christos Dimitrios</creator><creator>Kymissis, Ioannis</creator><creator>Purushothaman, Sampath</creator><scope>EFH</scope></search><sort><creationdate>20030527</creationdate><title>Method for improving performance of organic semiconductors in bottom electrode structure</title><author>Dimitrakopoulos, Christos Dimitrios ; Kymissis, Ioannis ; Purushothaman, Sampath</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_065697073</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Dimitrakopoulos, Christos Dimitrios</creatorcontrib><creatorcontrib>Kymissis, Ioannis</creatorcontrib><creatorcontrib>Purushothaman, Sampath</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dimitrakopoulos, Christos Dimitrios</au><au>Kymissis, Ioannis</au><au>Purushothaman, Sampath</au><aucorp>International Business Machines Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for improving performance of organic semiconductors in bottom electrode structure</title><date>2003-05-27</date><risdate>2003</risdate><abstract>The present invention relates to a method for improving the performance of thin film organic circuits having a readily manufacturable structure in which an organic semiconducting material is formed on the surface of patterned electrodes. A method for improving the performance of an organic thin film field effect transistor including the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, wherein R is a linear or branched, substituted or unsubstituted, alkyl, alkenyl, cycloalkyl or aromatic containing from about 6 to about 25 carbon atoms under conditions that are effective in forming a self-assembled monolayer of said thiol compound on said electrodes. Organic thin film transistor structures containing the self-assembled monolayer of the present invention are also disclosed.</abstract><oa>free_for_read</oa></addata></record>
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title Method for improving performance of organic semiconductors in bottom electrode structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T10%3A40%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Dimitrakopoulos,%20Christos%20Dimitrios&rft.aucorp=International%20Business%20Machines%20Corporation&rft.date=2003-05-27&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06569707%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true