High voltage integrated switching devices on a bonded and trenched silicon substrate

The present invention relates to high voltage integrated switching devices and to methods of fabricating several of such devices on a single silicon substrate. A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and ch...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Polce, Nestore A, Jones, Scotten W, Heisig, Mark F
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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