Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removal

1. Field of the Invention A process is disclosed for removing a photoresist mask used to form openings in an underlying layer of low k carbon-doped silicon oxide dielectric material of an integrated circuit structure formed on a semiconductor substrate, which comprises exposing the photoresist mask...

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Hauptverfasser:	Gu, Sam, Pritchard, David, Allman, Derryl D. J, Saopraseuth, Ponce, Reder, Steve
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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