Apparatus and method for depositing superior Ta(N)/copper thin films for barrier and seed applications in semiconductor processing

1. Field of the Invention A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions whe...

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Bibliographische Detailangaben

Hauptverfasser:	Ashtiani, Kaihan A, Biberger, Maximilian A, Klawuhn, Erich R, Lai, Kwok Fai, Levy, Karl B, Rymer, J. Patrick
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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