Method for selective activation and metallization of materials

The present invention relates to metallisation of materials, which may be electrically insulating, electrically semiconducting, or electrically conducting and relates in particular to electroless plating, and more particularly to a method for producing a patterned surface activation film on a substr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kelly, Patrick V, Crean, Gabriel M, Macauley, Daniel J
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Kelly, Patrick V
Crean, Gabriel M
Macauley, Daniel J
description The present invention relates to metallisation of materials, which may be electrically insulating, electrically semiconducting, or electrically conducting and relates in particular to electroless plating, and more particularly to a method for producing a patterned surface activation film on a substrate for receiving a layer of conducting material in a subsequent electroless plating step, and the use of organometallic compounds for surface activation in the metallisation of materials. An activated substrate surface suitable for electronics and microsystems preparation is prepare by contacting the surface with a surface activation compound, e.g. organometallic based on palladium, platinum, rhodium or iridium. The photo labile ligand has an optical absorption band which overlaps with the wavelength of the UV. A UV lamp is used, in combination with a mask, to selectively irradiate the contacted surface. Irradiation of the surface with light of a suitable wavelength decomposes the organometallic compound to the activating metal. The surface is then ready for electroless plating with the desired conducting material. The mask is patterned to delineate areas where surface activation is not to occur. The organometallic compound absorbs ultraviolet radiation in the wavelength range 210-260 nm, or in the wavelength range 290-330 nm, in the solid state if the compound exists as a solid at 25° C. or in the liquid state if the compound exists as a liquid at 25° C.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06524663</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06524663</sourcerecordid><originalsourceid>FETCH-uspatents_grants_065246633</originalsourceid><addsrcrecordid>eNrjZLDzTS3JyE9RSMsvUihOzUlNLsksS1VIBFGJJZn5eQqJeSkKuakliTk5mVUQkfw0hdzEktSizMScYh4G1jQglcoLpbkZFNxcQ5w9dEuLC4Bq8kqK49OLEkGUgZmpkYmZmbExEUoAS-Ux2A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for selective activation and metallization of materials</title><source>USPTO Issued Patents</source><creator>Kelly, Patrick V ; Crean, Gabriel M ; Macauley, Daniel J</creator><creatorcontrib>Kelly, Patrick V ; Crean, Gabriel M ; Macauley, Daniel J ; University College Cork-National University of Ireland</creatorcontrib><description>The present invention relates to metallisation of materials, which may be electrically insulating, electrically semiconducting, or electrically conducting and relates in particular to electroless plating, and more particularly to a method for producing a patterned surface activation film on a substrate for receiving a layer of conducting material in a subsequent electroless plating step, and the use of organometallic compounds for surface activation in the metallisation of materials. An activated substrate surface suitable for electronics and microsystems preparation is prepare by contacting the surface with a surface activation compound, e.g. organometallic based on palladium, platinum, rhodium or iridium. The photo labile ligand has an optical absorption band which overlaps with the wavelength of the UV. A UV lamp is used, in combination with a mask, to selectively irradiate the contacted surface. Irradiation of the surface with light of a suitable wavelength decomposes the organometallic compound to the activating metal. The surface is then ready for electroless plating with the desired conducting material. The mask is patterned to delineate areas where surface activation is not to occur. The organometallic compound absorbs ultraviolet radiation in the wavelength range 210-260 nm, or in the wavelength range 290-330 nm, in the solid state if the compound exists as a solid at 25° C. or in the liquid state if the compound exists as a liquid at 25° C.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6524663$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64038</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6524663$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kelly, Patrick V</creatorcontrib><creatorcontrib>Crean, Gabriel M</creatorcontrib><creatorcontrib>Macauley, Daniel J</creatorcontrib><creatorcontrib>University College Cork-National University of Ireland</creatorcontrib><title>Method for selective activation and metallization of materials</title><description>The present invention relates to metallisation of materials, which may be electrically insulating, electrically semiconducting, or electrically conducting and relates in particular to electroless plating, and more particularly to a method for producing a patterned surface activation film on a substrate for receiving a layer of conducting material in a subsequent electroless plating step, and the use of organometallic compounds for surface activation in the metallisation of materials. An activated substrate surface suitable for electronics and microsystems preparation is prepare by contacting the surface with a surface activation compound, e.g. organometallic based on palladium, platinum, rhodium or iridium. The photo labile ligand has an optical absorption band which overlaps with the wavelength of the UV. A UV lamp is used, in combination with a mask, to selectively irradiate the contacted surface. Irradiation of the surface with light of a suitable wavelength decomposes the organometallic compound to the activating metal. The surface is then ready for electroless plating with the desired conducting material. The mask is patterned to delineate areas where surface activation is not to occur. The organometallic compound absorbs ultraviolet radiation in the wavelength range 210-260 nm, or in the wavelength range 290-330 nm, in the solid state if the compound exists as a solid at 25° C. or in the liquid state if the compound exists as a liquid at 25° C.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZLDzTS3JyE9RSMsvUihOzUlNLsksS1VIBFGJJZn5eQqJeSkKuakliTk5mVUQkfw0hdzEktSizMScYh4G1jQglcoLpbkZFNxcQ5w9dEuLC4Bq8kqK49OLEkGUgZmpkYmZmbExEUoAS-Ux2A</recordid><startdate>20030225</startdate><enddate>20030225</enddate><creator>Kelly, Patrick V</creator><creator>Crean, Gabriel M</creator><creator>Macauley, Daniel J</creator><scope>EFH</scope></search><sort><creationdate>20030225</creationdate><title>Method for selective activation and metallization of materials</title><author>Kelly, Patrick V ; Crean, Gabriel M ; Macauley, Daniel J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_065246633</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Kelly, Patrick V</creatorcontrib><creatorcontrib>Crean, Gabriel M</creatorcontrib><creatorcontrib>Macauley, Daniel J</creatorcontrib><creatorcontrib>University College Cork-National University of Ireland</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kelly, Patrick V</au><au>Crean, Gabriel M</au><au>Macauley, Daniel J</au><aucorp>University College Cork-National University of Ireland</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for selective activation and metallization of materials</title><date>2003-02-25</date><risdate>2003</risdate><abstract>The present invention relates to metallisation of materials, which may be electrically insulating, electrically semiconducting, or electrically conducting and relates in particular to electroless plating, and more particularly to a method for producing a patterned surface activation film on a substrate for receiving a layer of conducting material in a subsequent electroless plating step, and the use of organometallic compounds for surface activation in the metallisation of materials. An activated substrate surface suitable for electronics and microsystems preparation is prepare by contacting the surface with a surface activation compound, e.g. organometallic based on palladium, platinum, rhodium or iridium. The photo labile ligand has an optical absorption band which overlaps with the wavelength of the UV. A UV lamp is used, in combination with a mask, to selectively irradiate the contacted surface. Irradiation of the surface with light of a suitable wavelength decomposes the organometallic compound to the activating metal. The surface is then ready for electroless plating with the desired conducting material. The mask is patterned to delineate areas where surface activation is not to occur. The organometallic compound absorbs ultraviolet radiation in the wavelength range 210-260 nm, or in the wavelength range 290-330 nm, in the solid state if the compound exists as a solid at 25° C. or in the liquid state if the compound exists as a liquid at 25° C.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_06524663
source USPTO Issued Patents
title Method for selective activation and metallization of materials
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T10%3A26%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kelly,%20Patrick%20V&rft.aucorp=University%20College%20Cork-National%20University%20of%20Ireland&rft.date=2003-02-25&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06524663%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true