Structure and process for buried bitline and single sided buried conductor formation

Structure and process for buried bitline and single sided buried conductor formation

The invention relates to semiconductor devices, including DRAM memory devices. In particular, the invention relates to such devices having buried single-sided conductors and methods for their formation. Semiconductor devices generally, and in particular DRAM memory devices, having buried, single-sid...

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Hauptverfasser: Athavale, Satish D, Divakaruni, Ramachandra, Mandelman, Jack A
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Sprache:eng
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creator Athavale, Satish D
Divakaruni, Ramachandra
Mandelman, Jack A
description The invention relates to semiconductor devices, including DRAM memory devices. In particular, the invention relates to such devices having buried single-sided conductors and methods for their formation. Semiconductor devices generally, and in particular DRAM memory devices, having buried, single-sided conductors are provided. Additionally, methods of fabricating semiconductor devices having buried, single-sided conductors are provided.
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title Structure and process for buried bitline and single sided buried conductor formation
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