Method of removing contaminants from integrated circuit substrates using cleaning solutions

Method of removing contaminants from integrated circuit substrates using cleaning solutions

1. Field of the Invention A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and annealing the substr...

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Hauptverfasser: Chung, Seung-pil, Chang, Kyu-hwan, Kwon, Young-min, Hah, Sang-lock
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Sprache:eng
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creator Chung, Seung-pil
Chang, Kyu-hwan
Kwon, Young-min
Hah, Sang-lock
description 1. Field of the Invention A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and annealing the substrate. Cleaning solutions includes ammonium, hydrogen peroxide, deionized water, and chelating agent. The chelating agent includes one to three compounds selected from the group consisting of carboxylic acid compounds, phosphonic acid compounds, and hydroxyl aromatic compounds. The fluorine-containing gas is a gas selected from the group consisting of nitrogen trifluoride (NF3), hexafluorosulphur (SF), and trifluorochlorine (ClF).
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Field of the Invention A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and annealing the substrate. Cleaning solutions includes ammonium, hydrogen peroxide, deionized water, and chelating agent. The chelating agent includes one to three compounds selected from the group consisting of carboxylic acid compounds, phosphonic acid compounds, and hydroxyl aromatic compounds. 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Field of the Invention A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and annealing the substrate. Cleaning solutions includes ammonium, hydrogen peroxide, deionized water, and chelating agent. The chelating agent includes one to three compounds selected from the group consisting of carboxylic acid compounds, phosphonic acid compounds, and hydroxyl aromatic compounds. The fluorine-containing gas is a gas selected from the group consisting of nitrogen trifluoride (NF3), hexafluorosulphur (SF), and trifluorochlorine (ClF).</abstract><oa>free_for_read</oa></addata></record>
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title Method of removing contaminants from integrated circuit substrates using cleaning solutions
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