Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch

The present invention relates to semiconductor devices such as complementary metal oxide semiconductor (CMOS) devices and metal oxide semiconductor field effect transistor (MOSFET) devices, and more particularly to a method for fabricating gates having notched features at the bottom of the gate by u...

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Bibliographische Detailangaben

Hauptverfasser:	Tsou, Len Y, Yan, Hongwen, Yang, Qingyun, Yu, Chienfan
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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