Method and structure of column interconnect

Method and structure of column interconnect

1. Field of the Invention A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a s...

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Hauptverfasser: Ellis-Monaghan, John J, Feeney, Paul M, Geffken, Robert M, Landis, Howard S, Previti-Kelly, Rosemary A, Bergman Reuter, Bette L, Rutten, Matthew J, Stamper, Anthony K, Yankee, Sally J
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creator Ellis-Monaghan, John J
Feeney, Paul M
Geffken, Robert M
Landis, Howard S
Previti-Kelly, Rosemary A
Bergman Reuter, Bette L
Rutten, Matthew J
Stamper, Anthony K
Yankee, Sally J
description 1. Field of the Invention A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.
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Field of the Invention A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.</abstract><oa>free_for_read</oa></addata></record>
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title Method and structure of column interconnect
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