Method and structure of column interconnect

1. Field of the Invention A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a s...

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Bibliographische Detailangaben
Hauptverfasser: Ellis-Monaghan, John J, Feeney, Paul M, Geffken, Robert M, Landis, Howard S, Previti-Kelly, Rosemary A, Bergman Reuter, Bette L, Rutten, Matthew J, Stamper, Anthony K, Yankee, Sally J
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:1. Field of the Invention A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.