Method for obtaining DC convergence for SOI FET models in a circuit simulation program
The present invention relates generally to a circuit simulation program and, more specifically, to a method for obtaining DC convergence for silicon-on-insulator (SOI) field effect transistors (FETs) models in the steady state DC phase of a circuit simulation program. A process for obtaining accurat...
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| Format: | Patent |
| Sprache: | eng |
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