High-temperature superconductor arrangement and a method for its production
This application claims priority under 35 U.S.C. §§119 and/or 365 to Appln. No. 199 57 981.4 filed in Germany on Dec. 2. 1999; the entire content of which is hereby incorporated by reference. The present invention relates to a high-temperature superconductor arrangement which is protected against ho...
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creator | Paul, Willi Chen, Makan |
description | This application claims priority under 35 U.S.C. §§119 and/or 365 to Appln. No. 199 57 981.4 filed in Germany on Dec. 2. 1999; the entire content of which is hereby incorporated by reference.
The present invention relates to a high-temperature superconductor arrangement which is protected against hot spots. A contact-making layer is provided between a superconductor layer and an electrical bypass which contact-making layer has anisotropic electrical conductivity. This ensures a low contact resistance between the superconductor and the bypass without the admittance being increased in the main current flow direction The said anisotropy is produced by discontinuities in the contact-making layer for example by said contact-making layer being broken down into areas which are not connected to one another. |
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The present invention relates to a high-temperature superconductor arrangement which is protected against hot spots. A contact-making layer is provided between a superconductor layer and an electrical bypass which contact-making layer has anisotropic electrical conductivity. This ensures a low contact resistance between the superconductor and the bypass without the admittance being increased in the main current flow direction The said anisotropy is produced by discontinuities in the contact-making layer for example by said contact-making layer being broken down into areas which are not connected to one another.</description><language>eng</language><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6475958$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6475958$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Paul, Willi</creatorcontrib><creatorcontrib>Chen, Makan</creatorcontrib><creatorcontrib>ABB Research Ltd</creatorcontrib><title>High-temperature superconductor arrangement and a method for its production</title><description>This application claims priority under 35 U.S.C. §§119 and/or 365 to Appln. No. 199 57 981.4 filed in Germany on Dec. 2. 1999; the entire content of which is hereby incorporated by reference.
The present invention relates to a high-temperature superconductor arrangement which is protected against hot spots. A contact-making layer is provided between a superconductor layer and an electrical bypass which contact-making layer has anisotropic electrical conductivity. This ensures a low contact resistance between the superconductor and the bypass without the admittance being increased in the main current flow direction The said anisotropy is produced by discontinuities in the contact-making layer for example by said contact-making layer being broken down into areas which are not connected to one another.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZPD2yEzP0C1JzS1ILUosKS1KVSguBTKT8_NSSpNL8osUEouKEvPSU3NT80oUEvNSFBIVclNLMvJTFNKAkpklxQoFRfkgpZn5eTwMrGmJOcWpvFCam0HBzTXE2UO3tLggsQRoQHF8OtAwIGVgZmJuamlqYUyEEgB76jca</recordid><startdate>20021105</startdate><enddate>20021105</enddate><creator>Paul, Willi</creator><creator>Chen, Makan</creator><scope>EFH</scope></search><sort><creationdate>20021105</creationdate><title>High-temperature superconductor arrangement and a method for its production</title><author>Paul, Willi ; Chen, Makan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_064759583</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Paul, Willi</creatorcontrib><creatorcontrib>Chen, Makan</creatorcontrib><creatorcontrib>ABB Research Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Paul, Willi</au><au>Chen, Makan</au><aucorp>ABB Research Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High-temperature superconductor arrangement and a method for its production</title><date>2002-11-05</date><risdate>2002</risdate><abstract>This application claims priority under 35 U.S.C. §§119 and/or 365 to Appln. No. 199 57 981.4 filed in Germany on Dec. 2. 1999; the entire content of which is hereby incorporated by reference.
The present invention relates to a high-temperature superconductor arrangement which is protected against hot spots. A contact-making layer is provided between a superconductor layer and an electrical bypass which contact-making layer has anisotropic electrical conductivity. This ensures a low contact resistance between the superconductor and the bypass without the admittance being increased in the main current flow direction The said anisotropy is produced by discontinuities in the contact-making layer for example by said contact-making layer being broken down into areas which are not connected to one another.</abstract><oa>free_for_read</oa></addata></record> |
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title | High-temperature superconductor arrangement and a method for its production |
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