Method for improved fabrication of salicide structures
The present invention relates generally to semiconductor processing and, more particularly, to improved techniques for fabricating cobalt silicide layers for use in self-aligned (salicide) technology. A method for preparing a semiconductor material for formation of a silicide layer on selected areas...
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| creator | Giewont, Kenneth J Wang, Yun Yu Arndt, Russell Ransom, Craig Coffin, Judith Domenicucci, Anthony MacDonald, Michael Johnson, Brian E |
| description | The present invention relates generally to semiconductor processing and, more particularly, to improved techniques for fabricating cobalt silicide layers for use in self-aligned (salicide) technology.
A method for preparing a semiconductor material for formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas. |
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A method for preparing a semiconductor material for formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas.</description><language>eng</language><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6475893$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6475893$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Giewont, Kenneth J</creatorcontrib><creatorcontrib>Wang, Yun Yu</creatorcontrib><creatorcontrib>Arndt, Russell</creatorcontrib><creatorcontrib>Ransom, Craig</creatorcontrib><creatorcontrib>Coffin, Judith</creatorcontrib><creatorcontrib>Domenicucci, Anthony</creatorcontrib><creatorcontrib>MacDonald, Michael</creatorcontrib><creatorcontrib>Johnson, Brian E</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><title>Method for improved fabrication of salicide structures</title><description>The present invention relates generally to semiconductor processing and, more particularly, to improved techniques for fabricating cobalt silicide layers for use in self-aligned (salicide) technology.
A method for preparing a semiconductor material for formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZDDzTS3JyE9RSMsvUsjMLSjKL0sFchKTijKTE0sy8_MU8tMUihNzMpMzU1IVikuKSpNLSotSi3kYWNMSc4pTeaE0N4OCm2uIs4duaXFBYklqXklxfHpRIogyMDMxN7WwNDYmQgkAkPUu5g</recordid><startdate>20021105</startdate><enddate>20021105</enddate><creator>Giewont, Kenneth J</creator><creator>Wang, Yun Yu</creator><creator>Arndt, Russell</creator><creator>Ransom, Craig</creator><creator>Coffin, Judith</creator><creator>Domenicucci, Anthony</creator><creator>MacDonald, Michael</creator><creator>Johnson, Brian E</creator><scope>EFH</scope></search><sort><creationdate>20021105</creationdate><title>Method for improved fabrication of salicide structures</title><author>Giewont, Kenneth J ; Wang, Yun Yu ; Arndt, Russell ; Ransom, Craig ; Coffin, Judith ; Domenicucci, Anthony ; MacDonald, Michael ; Johnson, Brian E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_064758933</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Giewont, Kenneth J</creatorcontrib><creatorcontrib>Wang, Yun Yu</creatorcontrib><creatorcontrib>Arndt, Russell</creatorcontrib><creatorcontrib>Ransom, Craig</creatorcontrib><creatorcontrib>Coffin, Judith</creatorcontrib><creatorcontrib>Domenicucci, Anthony</creatorcontrib><creatorcontrib>MacDonald, Michael</creatorcontrib><creatorcontrib>Johnson, Brian E</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Giewont, Kenneth J</au><au>Wang, Yun Yu</au><au>Arndt, Russell</au><au>Ransom, Craig</au><au>Coffin, Judith</au><au>Domenicucci, Anthony</au><au>MacDonald, Michael</au><au>Johnson, Brian E</au><aucorp>International Business Machines Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for improved fabrication of salicide structures</title><date>2002-11-05</date><risdate>2002</risdate><abstract>The present invention relates generally to semiconductor processing and, more particularly, to improved techniques for fabricating cobalt silicide layers for use in self-aligned (salicide) technology.
A method for preparing a semiconductor material for formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Method for improved fabrication of salicide structures |
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