Use of source/drain asymmetry MOSFET devices in dynamic and analog circuits

1. Field of the Invention A CMOS charge pump circuit with diode connected MOSFET transistors is formed with asymmetric transistors which preferably have halo source region implants with a forward threshold voltage (V) and with a reverse threshold voltage (V), with the forward threshold voltage Vbeing substantially larger than the reverse threshold voltage V. Preferably, the halo source regions are super halos. An SRAM circuit with pass transistors and pull down transistors includes pass transistors which comprise super halo asymmetric devices.