Semiconductor fabrication with multiple low dose implant

1. Field of Invention A method of reducing implant dose loss is provided. The method includes performing multiple low dose implant steps with interspersed anneal steps, thereby avoiding amorphous-silicon formation. The anneal steps may be performed at high temperatures or at low temperatures.

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Hauptverfasser:	Alvis, Roger L, Ishida, Emi
Format:	Patent
Sprache:	eng
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creator	Alvis, Roger L Ishida, Emi
description	1. Field of Invention A method of reducing implant dose loss is provided. The method includes performing multiple low dose implant steps with interspersed anneal steps, thereby avoiding amorphous-silicon formation. The anneal steps may be performed at high temperatures or at low temperatures.
format	Patent
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title	Semiconductor fabrication with multiple low dose implant
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