Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation
The present invention relates to metal/insulator interconnect structures found in Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging, and more particularly to interconnect structures comprising fluorine-containing, low dielectric constant (low-k) dielect...
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Sprache: | eng |
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