Method of making a semiconductor device having a dual damascene interconnect spaced from a support structure

The present invention relates to semiconductor devices that include dual damascene interconnects and methods for making them. A semiconductor device and an improved method for making it are described. The semiconductor device comprises a dual damascene interconnect that includes a conductive line. T...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Morrow, Patrick, Morrow, Xiaorong
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!