Atomic force microscopy and signal acquisition via buried insulator

The present invention relates generally to semiconductor devices and their fabrication and, more particularly, to testing and defect analysis of semiconductor dies signal acquisition. Analysis of a semiconductor die having silicon-on-insulator (SOI) structure is enhanced by accessing the circuitry w...

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Bibliographische Detailangaben

Hauptverfasser:	Birdsley, Jeffrey D, Bruce, Michael R, Davis, Brennan V, Ring, Rosalinda M, Stone, Daniel L
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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