Process for a high efficiency Class D microwave power amplifier operating in the S-Band

Process for a high efficiency Class D microwave power amplifier operating in the S-Band

1. Field of the Invention A process and product providing a High Efficiency Microwave Power Amplifier (HEMPA) which propagates S-Band microwave frequency square waves; utilizing a program simulating FETs at high DC-to-RF efficiencies, which analyses linear elements of selected FETs in a frequency do...

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description 1. Field of the Invention A process and product providing a High Efficiency Microwave Power Amplifier (HEMPA) which propagates S-Band microwave frequency square waves; utilizing a program simulating FETs at high DC-to-RF efficiencies, which analyses linear elements of selected FETs in a frequency domain, and non-linear elements of the FETs in a time domain, and converts the time domain values into the frequency domain, and performs DC and S-parameter simulated measurements based on predefined data for each FET. Individual FET parameters are extracted and isolated by converting the S-parameters to admittance or impedance parameters to derive FET models for each FET, which the program uses to provide a final output of a HEMPA circuit based on iterative simulations of an amplification circuit utilizing microwave topology and frequencies. Iterative simulations of the amplification circuit analyze output values of a plurality of cascaded stages of the FETs, which are arranged in a push-pull configuration.
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Field of the Invention A process and product providing a High Efficiency Microwave Power Amplifier (HEMPA) which propagates S-Band microwave frequency square waves; utilizing a program simulating FETs at high DC-to-RF efficiencies, which analyses linear elements of selected FETs in a frequency domain, and non-linear elements of the FETs in a time domain, and converts the time domain values into the frequency domain, and performs DC and S-parameter simulated measurements based on predefined data for each FET. Individual FET parameters are extracted and isolated by converting the S-parameters to admittance or impedance parameters to derive FET models for each FET, which the program uses to provide a final output of a HEMPA circuit based on iterative simulations of an amplification circuit utilizing microwave topology and frequencies. 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title Process for a high efficiency Class D microwave power amplifier operating in the S-Band
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