Voltage level shifter with high impedance tri-state output and method of operation

The present invention is generally directed to integrated circuits and, in particular, to voltage level shifters for driving output lines of an integrated circuit. There is disclosed a voltage level shifter that receives an input signal having a maximum Logic 1 value of VDD and produces an output si...

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Hauptverfasser: Wert, Joseph D, Ballachino, William E
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creator Wert, Joseph D
Ballachino, William E
description The present invention is generally directed to integrated circuits and, in particular, to voltage level shifters for driving output lines of an integrated circuit. There is disclosed a voltage level shifter that receives an input signal having a maximum Logic 1 value of VDD and produces an output signal having a maximum Logic 1 value of VDDI/O, where VDDI/O is greater than VDD. The voltage level shifter comprises: 1) a first circuit branch comprising A) a first p-type transistor having a source coupled to a first power supply having a level of VDDI/O and B) a first n-type transistor having a source coupled to ground, a drain coupled to a drain of the first p-type transistor, and a gate coupled to the input data signal; and 2) a second circuit branch comprising A) a second p-type transistor having a source coupled to the first power supply and a gate coupled to a drain of the first n-type transistor and B) a second n-type transistor having a source coupled to ground, a drain coupled to i) a drain of the second p-type transistor and ii) a gate of the first p-type transistor, and a gate coupled to an inverted copy of the input data signal, wherein a drain current of the first p-type transistor is larger than a drain current of the second p-type transistor for the same gate-to-source voltage, such that the first p-type transistor turns on faster than the second p-type transistor if the first power supply is powered up to VDDI/O when the first and second n-type transistors are off.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06384631</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06384631</sourcerecordid><originalsourceid>FETCH-uspatents_grants_063846313</originalsourceid><addsrcrecordid>eNqNyzEKAjEQQNE0FqLeYS6woEQWe1mxFrGVwUySgWwmJBO9vgoewOo1_y_N5SZJMRAkelKCFtkrVXixRogcIvBcyGF-EGjloSkqgXQtXQGzg5k0igPxIIUqKktem4XH1Gjzc2XgNF2P56G38rmztnuo-GU72sN-tDv7R_IG3ok5Dg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Voltage level shifter with high impedance tri-state output and method of operation</title><source>USPTO Issued Patents</source><creator>Wert, Joseph D ; Ballachino, William E</creator><creatorcontrib>Wert, Joseph D ; Ballachino, William E ; National Semiconductor Corporation</creatorcontrib><description>The present invention is generally directed to integrated circuits and, in particular, to voltage level shifters for driving output lines of an integrated circuit. There is disclosed a voltage level shifter that receives an input signal having a maximum Logic 1 value of VDD and produces an output signal having a maximum Logic 1 value of VDDI/O, where VDDI/O is greater than VDD. The voltage level shifter comprises: 1) a first circuit branch comprising A) a first p-type transistor having a source coupled to a first power supply having a level of VDDI/O and B) a first n-type transistor having a source coupled to ground, a drain coupled to a drain of the first p-type transistor, and a gate coupled to the input data signal; and 2) a second circuit branch comprising A) a second p-type transistor having a source coupled to the first power supply and a gate coupled to a drain of the first n-type transistor and B) a second n-type transistor having a source coupled to ground, a drain coupled to i) a drain of the second p-type transistor and ii) a gate of the first p-type transistor, and a gate coupled to an inverted copy of the input data signal, wherein a drain current of the first p-type transistor is larger than a drain current of the second p-type transistor for the same gate-to-source voltage, such that the first p-type transistor turns on faster than the second p-type transistor if the first power supply is powered up to VDDI/O when the first and second n-type transistors are off.</description><language>eng</language><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6384631$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64037</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6384631$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wert, Joseph D</creatorcontrib><creatorcontrib>Ballachino, William E</creatorcontrib><creatorcontrib>National Semiconductor Corporation</creatorcontrib><title>Voltage level shifter with high impedance tri-state output and method of operation</title><description>The present invention is generally directed to integrated circuits and, in particular, to voltage level shifters for driving output lines of an integrated circuit. There is disclosed a voltage level shifter that receives an input signal having a maximum Logic 1 value of VDD and produces an output signal having a maximum Logic 1 value of VDDI/O, where VDDI/O is greater than VDD. The voltage level shifter comprises: 1) a first circuit branch comprising A) a first p-type transistor having a source coupled to a first power supply having a level of VDDI/O and B) a first n-type transistor having a source coupled to ground, a drain coupled to a drain of the first p-type transistor, and a gate coupled to the input data signal; and 2) a second circuit branch comprising A) a second p-type transistor having a source coupled to the first power supply and a gate coupled to a drain of the first n-type transistor and B) a second n-type transistor having a source coupled to ground, a drain coupled to i) a drain of the second p-type transistor and ii) a gate of the first p-type transistor, and a gate coupled to an inverted copy of the input data signal, wherein a drain current of the first p-type transistor is larger than a drain current of the second p-type transistor for the same gate-to-source voltage, such that the first p-type transistor turns on faster than the second p-type transistor if the first power supply is powered up to VDDI/O when the first and second n-type transistors are off.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNyzEKAjEQQNE0FqLeYS6woEQWe1mxFrGVwUySgWwmJBO9vgoewOo1_y_N5SZJMRAkelKCFtkrVXixRogcIvBcyGF-EGjloSkqgXQtXQGzg5k0igPxIIUqKktem4XH1Gjzc2XgNF2P56G38rmztnuo-GU72sN-tDv7R_IG3ok5Dg</recordid><startdate>20020507</startdate><enddate>20020507</enddate><creator>Wert, Joseph D</creator><creator>Ballachino, William E</creator><scope>EFH</scope></search><sort><creationdate>20020507</creationdate><title>Voltage level shifter with high impedance tri-state output and method of operation</title><author>Wert, Joseph D ; Ballachino, William E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_063846313</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Wert, Joseph D</creatorcontrib><creatorcontrib>Ballachino, William E</creatorcontrib><creatorcontrib>National Semiconductor Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wert, Joseph D</au><au>Ballachino, William E</au><aucorp>National Semiconductor Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Voltage level shifter with high impedance tri-state output and method of operation</title><date>2002-05-07</date><risdate>2002</risdate><abstract>The present invention is generally directed to integrated circuits and, in particular, to voltage level shifters for driving output lines of an integrated circuit. There is disclosed a voltage level shifter that receives an input signal having a maximum Logic 1 value of VDD and produces an output signal having a maximum Logic 1 value of VDDI/O, where VDDI/O is greater than VDD. The voltage level shifter comprises: 1) a first circuit branch comprising A) a first p-type transistor having a source coupled to a first power supply having a level of VDDI/O and B) a first n-type transistor having a source coupled to ground, a drain coupled to a drain of the first p-type transistor, and a gate coupled to the input data signal; and 2) a second circuit branch comprising A) a second p-type transistor having a source coupled to the first power supply and a gate coupled to a drain of the first n-type transistor and B) a second n-type transistor having a source coupled to ground, a drain coupled to i) a drain of the second p-type transistor and ii) a gate of the first p-type transistor, and a gate coupled to an inverted copy of the input data signal, wherein a drain current of the first p-type transistor is larger than a drain current of the second p-type transistor for the same gate-to-source voltage, such that the first p-type transistor turns on faster than the second p-type transistor if the first power supply is powered up to VDDI/O when the first and second n-type transistors are off.</abstract><oa>free_for_read</oa></addata></record>
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title Voltage level shifter with high impedance tri-state output and method of operation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T04%3A21%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Wert,%20Joseph%20D&rft.aucorp=National%20Semiconductor%20Corporation&rft.date=2002-05-07&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06384631%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true