Ferroelectric memory
The present invention relates to a semiconductor memory and concerns a nonvolatile ferroelectric memory for storing data by using characteristics of a ferroelectric capacitor. To provide a ferroelectric memory, in which data can be positively protected even in an event of fluctuations in process par...
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| creator | Mano, Yoshitaka |
| description | The present invention relates to a semiconductor memory and concerns a nonvolatile ferroelectric memory for storing data by using characteristics of a ferroelectric capacitor.
To provide a ferroelectric memory, in which data can be positively protected even in an event of fluctuations in process parameter, time can be shortened for a reliability estimation test, and it is possible to avoid device breakage resulted from the test. A source voltage VDD is detected by using a source voltage detection circuit having a stable detection level. When a detected voltage RREFA is at or lower than a set detection level VREFA, an external input terminal XEXTCE is deactivated by using an output signal of a differential amplifier circuit to protect data. Thus, it is possible to protect data with stability. |
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To provide a ferroelectric memory, in which data can be positively protected even in an event of fluctuations in process parameter, time can be shortened for a reliability estimation test, and it is possible to avoid device breakage resulted from the test. A source voltage VDD is detected by using a source voltage detection circuit having a stable detection level. When a detected voltage RREFA is at or lower than a set detection level VREFA, an external input terminal XEXTCE is deactivated by using an output signal of a differential amplifier circuit to protect data. Thus, it is possible to protect data with stability.</description><language>eng</language><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6373744$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6373744$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mano, Yoshitaka</creatorcontrib><creatorcontrib>Matsushita Electric Industrial Co., Ltd</creatorcontrib><title>Ferroelectric memory</title><description>The present invention relates to a semiconductor memory and concerns a nonvolatile ferroelectric memory for storing data by using characteristics of a ferroelectric capacitor.
To provide a ferroelectric memory, in which data can be positively protected even in an event of fluctuations in process parameter, time can be shortened for a reliability estimation test, and it is possible to avoid device breakage resulted from the test. A source voltage VDD is detected by using a source voltage detection circuit having a stable detection level. When a detected voltage RREFA is at or lower than a set detection level VREFA, an external input terminal XEXTCE is deactivated by using an output signal of a differential amplifier circuit to protect data. Thus, it is possible to protect data with stability.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZBBxSy0qyk_NSU0uKcpMVshNzc0vquRhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwMzY3NjcxMSYCCUAUIch7w</recordid><startdate>20020416</startdate><enddate>20020416</enddate><creator>Mano, Yoshitaka</creator><scope>EFH</scope></search><sort><creationdate>20020416</creationdate><title>Ferroelectric memory</title><author>Mano, Yoshitaka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_063737443</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Mano, Yoshitaka</creatorcontrib><creatorcontrib>Matsushita Electric Industrial Co., Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mano, Yoshitaka</au><aucorp>Matsushita Electric Industrial Co., Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ferroelectric memory</title><date>2002-04-16</date><risdate>2002</risdate><abstract>The present invention relates to a semiconductor memory and concerns a nonvolatile ferroelectric memory for storing data by using characteristics of a ferroelectric capacitor.
To provide a ferroelectric memory, in which data can be positively protected even in an event of fluctuations in process parameter, time can be shortened for a reliability estimation test, and it is possible to avoid device breakage resulted from the test. A source voltage VDD is detected by using a source voltage detection circuit having a stable detection level. When a detected voltage RREFA is at or lower than a set detection level VREFA, an external input terminal XEXTCE is deactivated by using an output signal of a differential amplifier circuit to protect data. Thus, it is possible to protect data with stability.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | USPTO Issued Patents |
| title | Ferroelectric memory |
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