Method of cleaning a semiconductor device processing chamber after a copper etch process

1. Field of the Invention The present invention is a method for removing deposited etch byproducts from surfaces of a semiconductor processing chamber after a copper etch process. The method of the invention comprises the following general steps: (a) an oxidation step, in which interior surfaces of...

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Bibliographische Detailangaben

Hauptverfasser:	Lu, Danny Chien, Zhao, Allen, Hsieh, Peter, Shih, Hong, Xu, Li, Ye, Yan
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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